Search results for "Hydrogen silsesquioxane"

showing 3 items of 3 documents

MEMS analogous micro-patterning of thermotropic nematic liquid crystalline elastomer films using a fluorinated photoresist and a hard mask process

2017

In this work, we present a method to pattern liquid crystal elastomers (LCEs) in the micrometer range without using any mechanical processing steps to prepare micron sized LCE actuators compatible with microelectromechanical system (MEMS) technology. Multi-layer spin-coating processes are developed to synthesise and structure 300–3500 nm thick LCE films. A water soluble sacrificial layer, a photoalignment layer and a LCE formulation, which is polymerised and crosslinked in its liquid crystal phase, are spin-coated successively onto a substrate. A fluorinated photoresist layer is used to structure LCE films with thicknesses up to 700 nm in a photolithographic and etching process. For thicker…

Microelectromechanical systemsMaterials science02 engineering and technologyGeneral ChemistryPhotoresist010402 general chemistry021001 nanoscience & nanotechnology01 natural sciencesThermotropic crystal0104 chemical sciencesMicrometrechemistry.chemical_compoundchemistryLiquid crystalEtching (microfabrication)Materials ChemistryComposite material0210 nano-technologyLayer (electronics)Hydrogen silsesquioxaneJournal of Materials Chemistry C
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Adhesion of proton beam written high aspect ratio hydrogen silsesquioxane (HSQ) nanostructures on different metallic substrates

2009

Abstract Hydrogen silsesquioxane (HSQ) behaves as a negative resist under MeV proton beam exposure. HSQ is a high-resolution resist suitable for production of tall (

Nuclear and High Energy PhysicsNanostructureMaterials scienceProtonbusiness.industryNanotechnologyAdhesionPhotoresistProton beam writingchemistry.chemical_compoundchemistryResistOptoelectronicsbusinessInstrumentationHydrogen silsesquioxaneBeam (structure)Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
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Proton beam written hydrogen silsesquioxane (HSQ) nanostructures for Nickel electroplating

2009

Abstract Hydrogen silsesquioxane (HSQ) behaves as a negative resist under MeV proton beam exposure. HSQ is a high-resolution resist suitable for production of tall ( 1.5 μ m ) high-aspect-ratio nanostructures with dimensions down to 22 nm. High-aspect-ratio HSQ structures are required in many applications, e.g. nanofluidics, biomedical research, etc. Since P-beam writing is a direct and hence slow process, it is beneficiary to fabricate a reverse image of the patterns in a metallic stamp, e.g. by Ni electroplating. The Ni stamp can then be used to produce multiple copies of the same pattern. In this study we investigate the possibility to produce Ni stamps from p-beam written HSQ samples. H…

Nuclear and High Energy PhysicsNanostructureMaterials sciencebusiness.industryNanotechnologySubstrate (electronics)PhotoresistProton beam writingchemistry.chemical_compoundchemistryResistNickel electroplatingOptoelectronicsElectroplatingbusinessInstrumentationHydrogen silsesquioxaneNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
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